Description
The ceramic substrate with an isolated Cu via is brazed to a Tungsten: Copper carrier, and the carrier is firmly mounted to a system heatsink
- Our Ceramic Substrate :
Parameter Typical Value/Range Criterion Line/Space >40 µm/40 µm Precise, smooth, sharp line Metal Layer Thickness >20 µm, up to 100 µm (plated) Excellent flatness and adhesion Via Diameter 50 µm to 200 µm Viod-free via filling Dielectric Constant (εr) Al₂O₃, AlN, optimized for RF Thermal Conductivity Cu layers: ~400 W/m·K; AlN substrate: ~170 W/m·K Meet specific application`
