Description
Ceramic substrates are widely used in semiconductor packaging because of their excellent combination of properties that meet the demanding requirements of advanced electronic applications.
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- Ceramic substrates, such as Al₂O₃ and AlN, have high thermal conductivity and efficient heat dissipation, which is critical for maintaining the reliability and performance of high-power semiconductor devices.
Our Ceramic Substrate :
| Parameter | Typical Value/Range | Criterion |
| Line/Space | 10 µm/10 µm to 50 µm/50 µm | Precise, smooth, sharp line |
| Metal Layer Thickness | 1-20 µm (thin-film), up to 100 µm (plated) | Excellent flatness and adhesion |
| Via Diameter | 50 µm to 200 µm | Viod-free via filling |
| Dielectric Constant (εr) | 6-10 (Al₂O₃), 8-9 (AlN), optimized for RF | |
| Thermal Conductivity | Cu layers: ~400 W/m·K; AlN substrate: ~170 W/m·K | Meet specific application` |
| Surface Finishing | Eletroless Ni/Pt/Au | Good distribution |
| Electroplating Ni/Au | Good distribution |
